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Polished Wafers

Polished Wafers

Polished wafers are produced from FZ,CZ,or MCZ silicon ingots. These wafers achieve near-perfect surfaces that meet the highest standards for flatness and surface quality through cutting, lapping, polishing, and other processes. Depending on the dopant concentration, polished wafers are classified as either lightly doped or heavily doped.

Epitaxial Wafers

Epitaxial Wafers

Epitaxial wafers are polished wafers with one or more additional layers through epitaxy. These layers have specific dopant types, resistivity, thickness, and lattice structures.

SOI Wafers

SOI Wafers

SOI (silicon-on-insulator) wafers feature an oxide insulator buried layer between the top silicon layer and the supporting substrate. This structure can be used to produce high-performance, low-power, and highly integrated chips.

Argon-Annealed Wafers

Argon-Annealed Wafers

Argon-annealed wafers are polished wafers that have been annealed (treated with heat) in an argon environment to produce a clean surface layer. The annealing process helps to remove impurities and eliminate surface defects, thereby enhancing device performance.

SiC Epitaxial Wafers

SiC Epitaxial Wafers

SiC (silicon carbide) epitaxial wafers are silicon carbide wafers with a monocrystalline thin film grown on the substrate. This film meets specific requirements and aligns with the orientation of the substrate.

Silicon-based GaN Epitaxial Wafers

Silicon-based GaN Epitaxial Wafers

Silicon-based GaN (gallium nitride) epitaxial wafers are characterized by a wide band gap, high thermal conductivity, and excellent resistance to heat, radiation, and acid/alkali environments. They also exhibit great strength and hardness.

Other Products

Other Products

Lapped silicon wafers can be transformed into polished epitaxial wafers through polishing and other precision processes. Etched silicon wafers are produced through mixed acid etching, which removes the stress-damaged layer from the surface to maintain high-quality monocrystalline characteristics.

Polished Wafers

Polished wafers are produced from FZ,CZ,or MCZ silicon ingots. These wafers achieve near-perfect surfaces that meet the highest standards for flatness and surface quality through cutting, lapping, polishing, and other processes. Depending on the dopant concentration, polished wafers are classified as either lightly doped or heavily doped.

Epitaxial Wafers

Epitaxial wafers are polished wafers with one or more additional layers through epitaxy. These layers have specific dopant types, resistivity, thickness, and lattice structures.

SOI Wafers

SOI (silicon-on-insulator) wafers feature an oxide insulator buried layer between the top silicon layer and the supporting substrate. This structure can be used to produce high-performance, low-power, and highly integrated chips.

Argon-Annealed Wafers

Argon-annealed wafers are polished wafers that have been annealed (treated with heat) in an argon environment to produce a clean surface layer. The annealing process helps to remove impurities and eliminate surface defects, thereby enhancing device performance.

SiC Epitaxial Wafers

SiC (silicon carbide) epitaxial wafers are silicon carbide wafers with a monocrystalline thin film grown on the substrate. This film meets specific requirements and aligns with the orientation of the substrate.

Silicon-based GaN Epitaxial Wafers

Silicon-based GaN (gallium nitride) epitaxial wafers are characterized by a wide band gap, high thermal conductivity, and excellent resistance to heat, radiation, and acid/alkali environments. They also exhibit great strength and hardness.

Other Products

Lapped silicon wafers can be transformed into polished epitaxial wafers through polishing and other precision processes. Etched silicon wafers are produced through mixed acid etching, which removes the stress-damaged layer from the surface to maintain high-quality monocrystalline characteristics.

Polished Wafers
Epitaxial Wafers
SOI Wafers
Argon-Annealed Wafers
SiC Epitaxial Wafers
Silicon-based GaN Epitaxial Wafers
Other Products

Wafer Type Selection

Polished Wafers

Epitaxial Wafers

SOI Wafers

Argon-Annealed Wafers

SiC Epitaxial Wafers

Silicon-based GaN Epitaxial Wafers

Other Products

Product Specifications

Product Size Process Orientation Conductivity Type
300mm     MCZ/CZ

<100>

<110>

<111>

 N,P

 

Product Size Process Orientation Conductivity Type
200mm     MCZ/CZ

<100>

<111>

 N,P
FZ

 

Product Size Process Orientation Conductivity Type
≤150mm CZ/FZ

<100>

<111>

 N,P

 

Product Size Process Orientation Conductivity Type
300mm MCZ/CZ

<110>

<100>

 N,P

 

Product Size Process Orientation Conductivity Type
200mm MCZ/CZ

<100>

<111>

 N,P

 

Product Size Process Orientation Conductivity Type
≤150mm CZ

<100>

<111>

 N,P
Product Size Process Orientation Conductivity Type
300mm SOI

<100>

 N,P

 

Product Size Process Orientation Conductivity Type
200mm SOI

<100>

 N,P
Product Size Process Orientation Conductivity Type
300mm MCZ

<100>

 P

 

Product Size Process Orientation Conductivity Type
200mm MCZ/CZ

<100>

 P
Product Size Process Orientation Conductivity Type
200mm / <11-20> N,P

  

Product Size Process Orientation Conductivity Type
≤150mm / <11-20> N,P
Product Size Process Orientation Conductivity Type
200mm EPI  <0002> N,P

 

Product Size Process Orientation Conductivity Type
≤150mm EPI  <0002> N,P
Lapped Wafers Product Size Process Orientation Conductivity Type
≤150mm CZ/FZ

<100>

<111>

 N,P

 

Etched Wafers Product Size Process Orientation Conductivity Type
≤150mm CZ/FZ

<100>

<111>

 N,P

Features and Applications

FZ

Features

High voltage

High current

Application

High-voltage electric power

Microelectronic devices

Frequency converters, voltage regulators, etc

Picture Name
FZ

CZ

Heavy
Doping

Features

Energy

efficient

Application

Power switches

High frequency

Optical sensors

Image sensors, etc

Picture Name
CZ

MCZ

Light
Doping

Features

High storage density

High-performance computing

Low power consumption

Application

Memory chips

Analog chips

Logic chips, etc

Picture Name
MCZ

GaN
SiC

3rd-Gen Semiconductor Materials

Features

High temperature resistance

Radiation resistance

High frequency

High conversion efficiency

Application

Efficient fast charging

Traction inverters for new energy vehicles

Picture Name
GaN<br>SiC